Science of dry etching of III-V materials
Identifieur interne : 000156 ( Main/Exploration ); précédent : 000155; suivant : 000157Science of dry etching of III-V materials
Auteurs : RBID : ISTEX:10854_1994_Article_BF00717875.pdfAbstract
A review is given of dry etching of III-V semiconductors. Gas chemistries based on chlorine have traditionally been used for plasma etching of these materials due to the volatilities of both group III and group V chlorides. Recent work on the use of iodine- or bromine-based discharges has shown promising results, although the corrosiveness of the feedstock gases is of concern. For indium-containing III-V semiconductors, CH4/H2 plasmas have produced smooth anisotropic etching at relatively low rates. In applications requiring etch rates near 1 μm min−1, Cl2/CH4/H2 electron cyclotron resonance discharges have proved effective. Examples are given of the structural and chemical changes induced in the semiconductor as a result of dry etching, due to the combined effects of energetic ion bombardment and preferential removal of one of the lattice constituents. Applications for dry etching in modern microelectronic fabrication range from shallow (∼30 nm) mesa formation to creation of through-wafer via holes typically ∼100 μm deep.
DOI: 10.1007/BF00717875
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<record><TEI><teiHeader><fileDesc><titleStmt><title>Science of dry etching of III-V materials</title><author><name>S. J. Pearton</name><affiliation wicri:level="1"><mods:affiliation>AT&T Bell Laboratories, 07974, Murray Hill, NJ, USA</mods:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>AT&T Bell Laboratories, 07974, Murray Hill, NJ</wicri:regionArea><placeName><region type="state">New Jersey</region></placeName></affiliation></author><author><name>F. Ren</name><affiliation wicri:level="1"><mods:affiliation>AT&T Bell Laboratories, 07974, Murray Hill, NJ, USA</mods:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>AT&T Bell Laboratories, 07974, Murray Hill, NJ</wicri:regionArea><placeName><region type="state">New Jersey</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:10854_1994_Article_BF00717875.pdf</idno><date when="1994">1994</date><idno type="doi">10.1007/BF00717875</idno><idno type="wicri:Area/Main/Corpus">000751</idno><idno type="wicri:Area/Main/Curation">000751</idno><idno type="wicri:Area/Main/Exploration">000156</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">A review is given of dry etching of III-V semiconductors. Gas chemistries based on chlorine have traditionally been used for plasma etching of these materials due to the volatilities of both group III and group V chlorides. Recent work on the use of iodine- or bromine-based discharges has shown promising results, although the corrosiveness of the feedstock gases is of concern. For indium-containing III-V semiconductors, CH4/H2 plasmas have produced smooth anisotropic etching at relatively low rates. In applications requiring etch rates near 1 μm min−1, Cl2/CH4/H2 electron cyclotron resonance discharges have proved effective. Examples are given of the structural and chemical changes induced in the semiconductor as a result of dry etching, due to the combined effects of energetic ion bombardment and preferential removal of one of the lattice constituents. Applications for dry etching in modern microelectronic fabrication range from shallow (∼30 nm) mesa formation to creation of through-wafer via holes typically ∼100 μm deep.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="80ad4a35d3772b268360d1d863e36d0158c9461c"><titleInfo lang="eng"><title>Science of dry etching of III-V materials</title></titleInfo><name type="personal"><namePart type="given">S. J.</namePart><namePart type="family">Pearton</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>AT&T Bell Laboratories, 07974, Murray Hill, NJ, USA</affiliation></name><name type="personal"><namePart type="given">F.</namePart><namePart type="family">Ren</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>AT&T Bell Laboratories, 07974, Murray Hill, NJ, USA</affiliation></name><typeOfResource>text</typeOfResource><genre>Review</genre><genre>Review Paper</genre><originInfo><publisher>Kluwer Academic Publishers, Dordrecht</publisher><dateCaptured encoding="w3cdtf">1993-06-01</dateCaptured><dateValid encoding="w3cdtf">2004-11-17</dateValid><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">A review is given of dry etching of III-V semiconductors. Gas chemistries based on chlorine have traditionally been used for plasma etching of these materials due to the volatilities of both group III and group V chlorides. Recent work on the use of iodine- or bromine-based discharges has shown promising results, although the corrosiveness of the feedstock gases is of concern. For indium-containing III-V semiconductors, CH4/H2 plasmas have produced smooth anisotropic etching at relatively low rates. In applications requiring etch rates near 1 μm min−1, Cl2/CH4/H2 electron cyclotron resonance discharges have proved effective. Examples are given of the structural and chemical changes induced in the semiconductor as a result of dry etching, due to the combined effects of energetic ion bombardment and preferential removal of one of the lattice constituents. Applications for dry etching in modern microelectronic fabrication range from shallow (∼30 nm) mesa formation to creation of through-wafer via holes typically ∼100 μm deep.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>J Mater Sci: Mater Electron</title></titleInfo><titleInfo><title>Journal of Materials Science: Materials in Electronics</title><partNumber>Year: 1994</partNumber><partNumber>Volume: 5</partNumber><partNumber>Number: 1</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1994-02-01</dateIssued><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation Materials</topic></subject><identifier type="issn">0957-4522</identifier><identifier type="issn">Electronic: 1573-482X</identifier><identifier type="matrixNumber">10854</identifier><identifier type="local">IssueArticleCount: 13</identifier><recordInfo><recordOrigin>Chapman & Hall, 1994</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00717875</identifier><identifier type="matrixNumber">Art2</identifier><identifier type="local">BF00717875</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>1</start><end>12</end></extent></part><recordInfo><recordOrigin>Chapman & Hall, 1994</recordOrigin><recordIdentifier>10854_1994_Article_BF00717875.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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